Carrier confinement and fabrication effects in GaInAs-InP quantum wires and dots

R. W. Mac Leod; C. M.Sotomayor Torres; Y. S. Tang; Alain Kohl

doi:10.1051/jp4:1993569

Carrier confinement and fabrication effects in GaInAs-InP quantum wires and dots

R. W. Mac Leod, C. M.Sotomayor Torres, Y. S. Tang, Alain Kohl

University of Glasgow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We report a fabrication and luminescence study of GaInAs-InP single quantum wells down to lateral dimensions of 15 nm. The changes in the energy position of the spectrum of wires and dots is explored as a function of processing parameters. Blue energy shifts of up to 8 meV observed are too small considering the lateral dimensions and therefore processing induced strain has to be invoked to understand the weaker confinement in these structures. Tests of wet etching and annealing are reported.

Original language	English
Title of host publication	European Physical Journal: Special Topics
Pages	335-338
Number of pages	4
Volume	3
Edition	5
DOIs	https://doi.org/10.1051/jp4:1993569
Publication status	Published - 1 Jan 1993
Externally published	Yes

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title = "Carrier confinement and fabrication effects in GaInAs-InP quantum wires and dots",

abstract = "We report a fabrication and luminescence study of GaInAs-InP single quantum wells down to lateral dimensions of 15 nm. The changes in the energy position of the spectrum of wires and dots is explored as a function of processing parameters. Blue energy shifts of up to 8 meV observed are too small considering the lateral dimensions and therefore processing induced strain has to be invoked to understand the weaker confinement in these structures. Tests of wet etching and annealing are reported.",

author = "\{Mac Leod\}, \{R. W.\} and Torres, \{C. M.Sotomayor\} and Tang, \{Y. S.\} and Alain Kohl",

year = "1993",

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T1 - Carrier confinement and fabrication effects in GaInAs-InP quantum wires and dots

AU - Mac Leod, R. W.

AU - Torres, C. M.Sotomayor

AU - Tang, Y. S.

AU - Kohl, Alain

PY - 1993/1/1

Y1 - 1993/1/1

N2 - We report a fabrication and luminescence study of GaInAs-InP single quantum wells down to lateral dimensions of 15 nm. The changes in the energy position of the spectrum of wires and dots is explored as a function of processing parameters. Blue energy shifts of up to 8 meV observed are too small considering the lateral dimensions and therefore processing induced strain has to be invoked to understand the weaker confinement in these structures. Tests of wet etching and annealing are reported.

AB - We report a fabrication and luminescence study of GaInAs-InP single quantum wells down to lateral dimensions of 15 nm. The changes in the energy position of the spectrum of wires and dots is explored as a function of processing parameters. Blue energy shifts of up to 8 meV observed are too small considering the lateral dimensions and therefore processing induced strain has to be invoked to understand the weaker confinement in these structures. Tests of wet etching and annealing are reported.

U2 - 10.1051/jp4:1993569

DO - 10.1051/jp4:1993569

M3 - Conference contribution

VL - 3

SP - 335

EP - 338

BT - European Physical Journal: Special Topics

ER -

Carrier confinement and fabrication effects in GaInAs-InP quantum wires and dots

Abstract

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